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OPB855 датащи(PDF) 2 Page - OPTEK Technologies |
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OPB855 датащи(HTML) 2 Page - OPTEK Technologies |
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2 / 3 page ![]() OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006 Phone: (972) 323-2200 or (800) 341-4747 FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com Issue A .1 12/05 Page 2 of 3 OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible. Slotted Optical Switch OPB855 Absolute Maximum Ratings (TA=25°C unless otherwise noted) Storage & Operating Temperature Range -40°C to +85° C Lead Soldering Temperature [1/16 inch (1.6mm) from the case for 5 sec. with soldering iron] (1) 260° C Input Diode (See OP140 for additional information) Forward DC Current 50 mA Peak Forward Current (1 µs pulse width, 300 pps) 3 A Reverse DC Voltage 2 V Power Dissipation (2) 100 mW Collector-Emitter Voltage 30 V Emitter-Collector Voltage 5 V Output Phototransistor (See OP550 for additional information) Collector DC Current 30 mA Power Dissipation (2) 100 mW Notes: (1) RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering. (2) Derate linearly 1.67 mW/°C above 25 ° C.. (3) Methanol or isopropanol are recommended as cleaning agents. Plastic housing is soluble in chlorinated hydrocarbons and ketones. (4) All parameters were tested using pulse technique. Electrical Characteristics (TA = 25 °C unless otherwise noted) SYMBOL PARAMETER MIN TYP MAX UNITS TEST CONDITIONS Input Diode VF Forward Voltage - - 1.5 V IF = 40 mA IR Reverse Current - - 100 µA VR = 2 V Output Phototransistor V(BR)CEO Collector-Emitter Breakdown Voltage 30 - - V IC = 1 mA V(BR)ECO Emitter-Collector Breakdown Voltage 5 - - V IE = 100 µA ICEO Collector-Emitter Dark Current - - 100 nA VCE = 10 V, IF = 0, EE = 0 Combined VCE(SAT) Collector-Emitter Saturation Voltage - - 0.4 V IC = 400 µA, IF = 20 mA IC(ON) On-State Collector Current 500 - - µA VCE = 5 V, IF = 20 mA |
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