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OPB855 датащи(PDF) 2 Page - OPTEK Technologies

номер детали OPB855
подробное описание детали  Slotted Optical Switch
PDF  3 Pages
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производитель  OPTEK [OPTEK Technologies]
домашняя страница  http://www.optekinc.com
Logo OPTEK - OPTEK Technologies

OPB855 датащи(HTML) 2 Page - OPTEK Technologies

  OPB855 Datasheet HTML 1Page - OPTEK Technologies OPB855 Datasheet HTML 2Page - OPTEK Technologies OPB855 Datasheet HTML 3Page - OPTEK Technologies  
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OPTEK Technology Inc. — 1645 Wallace Drive, Carrollton, Texas 75006
Phone: (972) 323-2200 or (800) 341-4747
FAX: (972) 323-2396 sensors@optekinc.com www.optekinc.com
Issue A .1
12/05
Page 2 of 3
OPTEK reserves the right to make changes at any time in order to improve design and to supply the best product possible.
Slotted Optical Switch
OPB855
Absolute Maximum Ratings (TA=25°C unless otherwise noted)
Storage & Operating Temperature Range
-40°C to +85° C
Lead Soldering Temperature [1/16 inch (1.6mm) from the case for 5 sec. with soldering iron]
(1)
260° C
Input Diode (See OP140 for additional information)
Forward DC Current
50 mA
Peak Forward Current (1 µs pulse width, 300 pps)
3 A
Reverse DC Voltage
2 V
Power Dissipation
(2)
100 mW
Collector-Emitter Voltage
30 V
Emitter-Collector Voltage
5 V
Output Phototransistor (See OP550 for additional information)
Collector DC Current
30 mA
Power Dissipation
(2)
100 mW
Notes:
(1)
RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering.
(2)
Derate linearly 1.67 mW/°C above 25 ° C..
(3)
Methanol or isopropanol are recommended as cleaning agents. Plastic housing is soluble in chlorinated hydrocarbons and
ketones.
(4)
All parameters were tested using pulse technique.
Electrical Characteristics (TA = 25
°C unless otherwise noted)
SYMBOL
PARAMETER
MIN
TYP
MAX
UNITS
TEST CONDITIONS
Input Diode
VF
Forward Voltage
-
-
1.5
V
IF = 40 mA
IR
Reverse Current
-
-
100
µA
VR = 2 V
Output Phototransistor
V(BR)CEO
Collector-Emitter Breakdown Voltage
30
-
-
V
IC = 1 mA
V(BR)ECO
Emitter-Collector Breakdown Voltage
5
-
-
V
IE = 100 µA
ICEO
Collector-Emitter Dark Current
-
-
100
nA
VCE = 10 V, IF = 0, EE = 0
Combined
VCE(SAT)
Collector-Emitter Saturation Voltage
-
-
0.4
V
IC = 400 µA, IF = 20 mA
IC(ON)
On-State Collector Current
500
-
-
µA
VCE = 5 V, IF = 20 mA



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