NVMJS2D5N06CL datasheet(4/7 Pages) ONSEMI

номер детали	NVMJS2D5N06CL

подробное описание детали	MOSFET ??Power, Single N-Channel 60 V, 2.4 m, 164 A

PDF	7 Pages

Scroll/Zoom	100%

производитель	ONSEMI [ON Semiconductor]

домашняя страница	http://www.onsemi.com

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NVMJS2D5N06CL

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TYPICAL CHARACTERISTICS

Figure 7. Capacitance Variation

Figure 8. Gate−to−Source vs. Total Charge

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

QG, TOTAL GATE CHARGE (nC)

Figure 9. Resistive Switching Time Variation

vs. Gate Resistance

Figure 10. Diode Forward Voltage vs. Current

RG, GATE RESISTANCE (W)

VSD, SOURCE−TO−DRAIN VOLTAGE (V)

Figure 11. Maximum Rated Forward Biased

Safe Operating Area

Figure 12. Maximum Drain Current vs. Time in

Avalanche

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

TAV, TIME IN AVALANCHE (s)

VGS = 0 V

TJ = 25°C

f = 1 MHz

CISS

COSS

CRSS

VDS = 48 V

TJ = 25°C

ID = 50 A

QGS

QGD

VGS = 10 V

VDS = 48 V

ID = 50 A

td(off)

td(on)

TJ = 125°C

TJ = 25°C

TJ = −55°C

0.1

100

1000

10000

010

020

100

0.3

0.4

0.6

0.7

0.8

1.0

1000

100

0.1

100

0.1

0.01

VGS = 0 V

100

0.1

0.5

0.9

1000

RDS(on) Limit

Thermal Limit

Package Limit

TC = 25°C

VGS ≤ 10 V

Single Pulse

500 ms

1 ms

10 ms

TJ (initial)= 25°C

100

1.E−05

TJ (initial)= 100°C

1.E−04

1.E−03

1.E−02

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