NVMJS0D8N04CL

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2

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

40

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

18

mV/°C

Zero Gate Voltage Drain Current

10

mA

250

Gate−to−Source Leakage Current

100

nA

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

1.2

2.0

V

Threshold Temperature Coefficient

−5.7

mV/°C

Drain−to−Source On Resistance

0.60

0.72

mW

0.91

1.15

Forward Transconductance

500

S

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance

9600

pF

Output Capacitance

4690

Reverse Transfer Capacitance

119

Total Gate Charge

78

nC

Total Gate Charge

162

Threshold Gate Charge

14

Gate−to−Source Charge

25

Gate−to−Drain Charge

29

Plateau Voltage

2.7

V

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time

36

ns

Rise Time

50

Turn−Off Delay Time

81

Fall Time

37

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

0.73

1.2

V

0.6

Reverse Recovery Time

83

ns

Charge Time

53

Discharge Time

30

Reverse Recovery Charge

163

nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

5. Switching characteristics are independent of operating junction temperatures.