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BAS285 датащи(PDF) 2 Page - Vishay Siliconix |
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BAS285 датащи(HTML) 2 Page - Vishay Siliconix |
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2 / 4 page ![]() BAS285 www.vishay.com Vishay Semiconductors Rev. 2.1, 16-Nov-2021 2 Document Number: 85501 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) Fig. 1 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 2 - Reverse Current vs. Junction Temperature Fig. 3 - Forward Current vs. Forward Voltage Fig. 4 - Diode Capacitance vs. Reverse Voltage 0 20 40 60 80 100 120 140 160 180 200 25 50 75 100 125 150 T j - Junction Temperature (°C) 15822 V R = 30 V R thJA = 540 kW P R - Limit at 100 % V R P R - Limit at 80 % V R 1 10 100 1000 25 50 75 100 125 150 15823 V R = VRRM T j - Junction Temperature (°C) 0 0.5 1.0 1.5 15824 0.1 1 10 100 1000 T j = 125 °C V F - Forward Voltage (V) T j = 25 °C 0 1 2 3 4 5 6 7 8 9 10 0.1 1 10 100 15825 f = 1 MHz V R - Reverse Voltage (V) |
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