MBRF1090 datasheet(2/4 Pages) VISHAY

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MBRF1090, MBRF10100

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Vishay General Semiconductor

Revision: 22-Mar-18

Document Number: 89320

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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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Notes

(1) Pulse test: 300 μs pulse width, 1 % duty cycle

(2) Pulse test: Pulse width

 40 ms



RATINGS AND CHARACTERISTICS CURVES (TC = 25 °C unless otherwise noted)

Fig. 1 - Forward Current Derating Curve

Fig. 2 - Maximum Non-Repetititve Peak Forward Surge Current

ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

VALUE

UNIT

Maximum instantaneous forward voltage

IF = 10 A

TC = 25 °C

VF (1)

0.80

TC = 125 °C

0.65

IF = 20 A

0.75

Maximum reverse current



at working peak reverse voltage

TJ = 25 °C

IR (2)

100

μA

TJ = 100 °C

6.0

THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

MBRF

UNIT

Typical thermal resistance per diode

RJC

3.5

°C/W

ORDERING INFORMATION (Example)

PACKAGE

PREFERRED P/N

UNIT WEIGHT (g)

PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

ITO-220AC

MBRF10100-M3/4W

1.384

50/tube

Tube

100

150

Case Temperature (°C)

Resistive or Inductive Load

100

140

120

160

100

J = TJ max.

8.3 ms Single Half Sine-Wave

Number of Cycles at 60 Hz

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