BAS16

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Vishay Semiconductors

Rev. 1.9, 11-Jul-17

1

Document Number: 85539

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Small Signal Fast Switching Diode

DESIGN SUPPORT TOOLS click logo to get started

MECHANICAL DATA

Case: SOT-23

Weight: approx. 8.8 mg

Packaging codes / options:

18/10K per 13

" reel (8 mm tape), 10K/box

08/3K per 7

" reel (8 mm tape), 15K/box

FEATURES

• Silicon epitaxial planar diode

• Ultra fast switching speed

• Surface mount package ideally suited for

automatic insertion

• High conductance

• AEC-Q101 qualified available

• Base P/N-E3 - RoHS-compliant, commercial grade

• Base P/N-HE3 - RoHS-compliant, AEC-Q101 qualified

• Material categorization: for definitions of compliance

12

3

Available

Models

PARTS TABLE

PART

ORDERING CODE

CIRCUIT CONFIGURATION

TYPE MARKING

REMARKS

BAS16

BAS16-E3-08 or BAS16-E3-18

Single

A6

Tape and reel

BAS16-HE3-08 or BAS16-HE3-18

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Non repetitive peak reverse voltage

100

V

Repetitive peak reverse voltage

= working peak reverse voltage

= DC blocking voltage

75

V

Peak forward surge current

1A

2A

Average forward current

Half wave rectification with resistive load and

f

≥ 50 MHz, on ceramic substrate

8 mm x 10 mm x 0.7 mm

150

mA

Forward current

On ceramic substrate

8 mm x 10 mm x 0.7 mm

300

mA

Power dissipation

On ceramic substrate

8 mm x 10 mm x 0.7 mm

350

mW

PARAMETER

TEST CONDITION

SYMBOL

VALUE

UNIT

Junction ambient

On ceramic substrate

8 mm x 10 mm x 0.7 mm

357

K/W

Junction and storage temperature range

-55 to +150

°C

Operating temperature range

-55 to +150

°C