V2PL45

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Vishay General Semiconductor

Revision: 04-Aug-2020

3

Document Number: 87526

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 3 - Typical Instantaneous Forward Characteristics

Fig. 4 - Typical Reverse Leakage Characteristics

Fig. 5 - Typical Junction Capacitance

Fig. 6 - Typical Transient Thermal Impedance

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)

0.01

0.1

1

10

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

Instantaneous Forward Voltage (V)

T

T

T

T

T

0.00001

0.0001

0.001

0.01

0.1

1

10

10

20

30

40

50

60

70

80

90

100

Percent of Rated Peak Reverse Voltage (%)

T

T

T

T

T

1

10

100

1000

0.1

1

10

100

Reverse Voltage (V)

T

f = 1.0 MHz

V

1

10

100

1000

0.01

0.1

1

10

100

t - Pulse Duration (s)

Junction to ambient

0.106 (2.70)

0.091 (2.30)

0.055 (1.40)

0.047 (1.20)

Cathode Band

MicroSMP (DO-219AD)

0.030 (0.75)

0.022 (0.55)

0.030 (0.75)

0.022 (0.55)

0.059 (1.50)

0.043 (1.10)

0.039 (0.98)

0.031 (0.78)

0.091 (2.30)

0.083 (2.10)

0.020 (0.50)

0.043

(1.10)

0.011 (0.27)

0.005 (0.12)

0.079

(2.00)

0.032

(0.80)

0.032

(0.80)

Mounting Pad Layout

0.029 (0.73)

0.025 (0.63)