BLF888AS datasheet(3/17 Pages) AMPLEON

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BLF888A_BLF888AS#6

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Product data sheet

Rev. 6 — 1 September 2015

3 of 17

BLF888A; BLF888AS

UHF power LDMOS transistor

4. Limiting values

[1]

Continuous use at maximum temperature will affect the reliability, for details refer to the on-line MTF

calculator.

5. Thermal characteristics

[1]

Rth(j-c) is measured under RF conditions.

6. Characteristics

[1]

ID is the drain current.

[2]

Capacitance values without internal matching.

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

VDS

drain-source voltage

110

VGS

gate-source voltage

0.5

+11

Tstg

storage temperature

65

+150

C

junction temperature

[1]

225

C

Table 5.

Thermal characteristics

Symbol Parameter

Conditions

Typ Unit

Rth(j-c)

thermal resistance from junction to case Tcase =80 C; PL(AV) =125 W [1] 0.15 K/W

Table 6.

DC characteristics

Tj =25 C; per section unless otherwise specified.

Symbol Parameter

Conditions

Min Typ Max Unit

V(BR)DSS drain-source breakdown voltage VGS =0 V; ID = 2.4 mA

[1] 110 -

VGS(th)

gate-source threshold voltage

VDS =10 V; ID = 240 mA [1] 1.4 1.9 2.4

IDSS

drain leakage current

VGS =0 V; VDS =50V

2.8

A

IDSX

drain cut-off current

VGS =VGS(th) +3.75 V;

VDS =10 V

-36

IGSS

gate leakage current

VGS =10 V; VDS = 0 V

280 nA

RDS(on)

drain-source on-state resistance VGS =VGS(th) +3.75 V;

ID =8.5 A

[1] -143 -



Ciss

input capacitance

VGS = 0 V; VDS =50V;

f= 1MHz

[2] -220 -

Coss

output capacitance

VGS = 0 V; VDS =50V;

f= 1MHz

-74

Crss

reverse transfer capacitance

VGS = 0 V; VDS =50V;

f= 1MHz

-1.2

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