BLF2425M9LS140 datasheet(3/10 Pages) AMPLEON

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BLF2425M9LS140

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Product data sheet

Rev. 2 — 21 October 2016

3 of 10

BLF2425M9LS140

Power LDMOS transistor

6. Characteristics

7. Test information

7.1 Ruggedness in class-AB operation

The BLF2425M9LS140 is capable of withstanding a load mismatch corresponding to

VSWR = 10 : 1 through all phases under the following conditions: VDS =28V;

IDq =60mA; PL = 140 W (CW); f = 2450 MHz.

7.2 Impedance information

Table 6.

DC characteristics

Tj = 25 C unless otherwise specified.

Symbol Parameter

Conditions

Min

Typ Max Unit

V(BR)DSS drain-source breakdown voltage VGS =0V; ID = 1.806 mA

VGS(th)

gate-source threshold voltage

VDS =10 V; ID = 180.6 mA

1.5

2.08 3.1

IDSS

drain leakage current

VGS =0V; VDS =32V

4.2

A

IDSX

drain cut-off current

VGS =VGS(th) +3.75 V;

VDS =10 V

-36

IGSS

gate leakage current

VGS =11V; VDS = 0 V

420 nA

gfs

forward transconductance

VDS =10 V; ID =9A

RDS(on)

drain-source on-state resistance VGS =VGS(th) + 3.75 V;

ID =6.32A

-69



Table 7.

RF characteristics

Test signal: CW; f = 2450 MHz; VDS = 28 V; IDq = 60 mA; Tcase = 25 C unless otherwise specified in

a class-AB production test circuit.

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

power gain

PL = 140 W

17.5

RLin

input return loss

PL = 140 W

10

6dB

D

drain efficiency

PL = 140 W

Table 8.

Typical impedance

Measured load-pull data. Typical values unless otherwise specified. IDq =60 mA; VDS =28 V.

ZS and ZL defined in Figure 1.

(MHz)

(

)

(

)

2400

1.85

 j4.12

1.40

 j1.28

2450

1.81

 j5.00

1.32

 j1.48

2500

4.06

 j2.98

1.22

 j1.66

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