BLF2425M7LS250P datasheet(1/11 Pages) AMPLEON

номер детали	BLF2425M7LS250P

подробное описание детали	Power LDMOS transistor

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производитель	AMPLEON [Ampleon Netherlands B.V.]

домашняя страница	https://www.ampleon.com

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1. Product profile

1.1 General description

250 W LDMOS power transistor for Industrial, Scientific and Medical (ISM) applications at

frequencies from 2400 MHz to 2500 MHz.

The BLF2425M7L250P and BLF2425M7LS250P are designed for high-power CW

applications and are assembled in high performance ceramic packages, available in

eared and earless versions

1.2 Features and benefits



High efficiency



Easy power control



Excellent ruggedness



Excellent thermal stability



Integrated ESD protection



Designed for broadband operation (2400 MHz to 2500 MHz)



Internally matched



Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances

(RoHS)

1.3 Applications



RF power amplifiers for CW applications in the 2400 MHz to 2500 MHz frequency

range such as ISM and industrial heating.

BLF2425M7L250P;

BLF2425M7LS250P

Power LDMOS transistor

Rev. 5 — 1 September 2015

Product data sheet

Table 1.

Typical performance

RF performance at Tcase = 25 C in a common source class-AB production test circuit.

Test signal

f

VDS

PL(AV)

Gp

D

(MHz)

(V)

(W)

(dB)

(%)

CW

2450

28

250

15

51

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NXP Semiconductors	BLF2425M7LS140	299Kb / 11P	Power LDMOS transistor Rev. 3-6 September 2012

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Аналогичное описание - BLF2425M7LS250P

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