BLF647PS#3

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© Ampleon The Netherlands B.V. 2015. All rights reserved.

Product data sheet

Rev. 3 — 1 September 2015

2 of 14

BLF647PS

Broadband power LDMOS transistor

2. Pinning information

[1]

Connected to flange

3. Ordering information

4. Limiting values

[1]

Continuous use at maximum temperature will affect the reliability. For details refer to the on-line MTF

calculator.

5. Thermal characteristics

[1]

Table 2.

Pinning

Pin

Description

Simplified outline

Graphic symbol

1drain1

2drain2

3gate1

4gate2

5source

[1]

5

12

34

4

3

5

1

2

sym117

Table 3.

Ordering information

Type number

Package

Name Description

Version

BLF647PS

-

earless flanged ceramic package; 4 leads

SOT1121B

Table 4.

Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol

Parameter

Conditions

Min

Max

Unit

drain-source voltage

-

65

V

gate-source voltage

0.5

+11

V

storage temperature

65

+150

C

junction temperature

[1] -225

C

Table 5.

Thermal characteristics

Symbol Parameter

Conditions

Typ Unit

thermal resistance from junction to case

[1] 0.34 K/W