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BLF574 датащи(PDF) 11 Page - Ampleon Netherlands B.V. |
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BLF574 датащи(HTML) 11 Page - Ampleon Netherlands B.V. |
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11 / 19 page ![]() BLF574 All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2016. All rights reserved. Product data sheet Rev. 4 — 1 December 2016 11 of 19 BLF574 HF / VHF power LDMOS transistor 8.2 RF performance The following figures are measured in a class-AB production test circuit. 8.2.1 1-Tone CW VDS = 50 V; IDq = 1000 mA; f = 225 MHz. VDS = 50 V; f = 225 MHz. (1) IDq = 400 mA (2) IDq = 600 mA (3) IDq = 800 mA (4) IDq = 1000 mA (5) IDq = 1200 mA (6) IDq = 1400 mA (7) IDq = 1800 mA Fig 10. Power gain and drain efficiency as functions of load power; typical values Fig 11. Power gain as function of load power; typical values PL (W) 0 500 400 200 300 100 001aaj134 26 24 28 30 Gp (dB) 22 40 20 60 80 0 ηD (%) Gp ηD PL (W) 0 500 400 200 300 100 001aaj135 26 24 28 30 Gp (dB) 22 (7) (6) (5) (4) (3) (2) (1) |
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