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ART700FH датащи(PDF) 3 Page - Ampleon Netherlands B.V. |
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ART700FH датащи(HTML) 3 Page - Ampleon Netherlands B.V. |
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3 / 16 page ![]() ART700FH All information provided in this document is subject to legal disclaimers. © Ampleon Netherlands B.V. 2021. All rights reserved. Product data sheet Rev. 1 — 24 September 2021 3 of 16 ART700FH Power LDMOS transistor 6. Characteristics (1) = 1 % (2) = 2 % (3) = 5 % (4) = 10 % (5) = 20 % (6) = 50 % (7) = 100 % (DC) Fig 1. Transient thermal impedance from junction to case as a function of pulse duration amp01661 10-7 10-6 10-5 10-4 10-3 10-2 10-1 1 10 0 0.04 0.08 0.12 0.16 0.2 tp (s) Zth(j-c) th(j-c) Zth(j-c) (K/W) (K/W) (K/W) (7) (7) (7) (6) (6) (6) (5) (5) (5) (4) (4) (4) (3) (3) (3) (2) (2) (2) (1) (1) (1) Table 6. DC characteristics Tj = 25 C; per section unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS =0V; ID = 2.8 mA 177 191 - V VGS(th) gate-source threshold voltage VDS =20 V; ID = 275 mA 1.5 2.1 2.5 V IDSS drain leakage current VGS =0V; VDS =50V - - 1.4 A IDSX drain cut-off current VGS =VGS(th) +3.75 V; VDS =20V -40 - A IGSS gate leakage current VGS =11V; VDS = 0 V - - 140 nA RDS(on) drain-source on-state resistance VGS =VGS(th) + 3.75 V; ID = 9.625 A - 0.171 - |
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