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TLE4953X датащи(PDF) 16 Page - Infineon Technologies AG |
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TLE4953X датащи(HTML) 16 Page - Infineon Technologies AG |
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16 / 21 page ![]() TLE4953x Specifications Data Sheet 16 Version 4.1, 2018-01-02 3.6 Electro Magnetic Compatibility Electro Magnetic Compatibility (values depends on RM!). Note: Characterization of Electro Magnetic Compatibility is carried out on samples based on one qualification lot. Not all specification parameters have been monitored during EMC exposure. Only key parameters e.g. switching current have been monitored. 1. Ref. ISO 7637-1; test circuit 1; ∆B =2 mT (amplitude of sinus signal); VCC = 13.5V, fB = 100 Hz; T = 25 °C; RM ≥ 75 Ω Table 3-6 Conducted Pulses Parameter Symbol Level/Type Status Ref. ISO 7637-1; test circuit 1; ∆B = 2 mT (amplitude of sinus signal); VCC=13.5V, fB = 100 Hz; T = 25 °C; RM ≥ 75 Ω Testpulse 1 VEMC IV / -100 V C1) 1) According to 7637-1 the supply switched "OFF" for t = 200 ms. Testpulse 2 IV / 100 V C1) Testpulse 3a IV / -150 V A Testpulse 3b IV / 100 V A Testpulse 4 IV / -7 V B2) 2) According to 7637-1 for test pulse 4 the test voltage shall be 12 V ± 0.2 V. Measured with RM =75W only. Mainly the current consumption will decrease. Status C with test circuit 1. Testpulse 5 IV / 86.53) V 3) Applying in the board net a suppressor diode with sufficient energy absorption capability. C Table 3-7 Coupled Pulses Parameter Symbol Level/Typ Status Ref. ISO 7637-3; test circuit 1; ∆B = 2 mT (amplitude of sinus signal); VCC=13.5V, fB = 100 Hz; T = 25 °C; RM ≥ 75 Ω Testpulse 1 VEMC IV / -30 V A Testpulse 2 IV / 30 V A Testpulse 3a IV / -60 V A Testpulse 3b IV / 40 V A Table 3-8 TEM-cell measurement Parameter Symbol Level/Typ Status Ref. ISO 11452-3; test circuit 1; measured in TEM-cell ∆B = 2 mT; VCC=13.5V, fB = 100 Hz; T = 25 °C EMC field strength (TLE4953) ETemCell IV / 200 V/m AM = 80% f =1 kHz EMC field strength (TLE4953C) ETemCell IV / 250 V/m AM=80% f =1 kHz |
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