MMDF3N02HD

http://onsemi.com

2

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–to–Source Breakdown Voltage

(VGS = 0 Vdc, ID = 250 µAdc)

Temperature Coefficient (Positive)

V(BR)DSS

20

–

–

29

–

–

Vdc

mV/

°C

Zero Gate Voltage Drain Current

(VDS = 20 Vdc, VGS = 0 Vdc)

(VDS = 20 Vdc, VGS = 0 Vdc, TJ = 125°C)

IDSS

–

–

–

–

1.0

10

µAdc

Gate–Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)

IGSS

–

–

100

nAdc

ON CHARACTERISTICS (Note 2.)

Gate Threshold Voltage

(VDS = VGS, ID = 250 µAdc)

Threshold Temperature Coefficient (Negative)

VGS(th)

1.0

–

1.5

4.0

2.0

–

Vdc

mV/

°C

Static Drain–to–Source On–Resistance

(VGS = 10 Vdc, ID = 3.0 Adc)

(VGS = 4.5 Vdc, ID = 1.5 Adc)

RDS(on)

–

–

0.058

0.074

0.090

0.100

Ohms

Forward Transconductance (VDS = 3.0 Vdc, ID = 1.5 Adc)

gFS

2.0

3.88

–

Mhos

DYNAMIC CHARACTERISTICS

Input Capacitance

(V

16 Vd

V

0 Vd

Ciss

–

455

630

pF

Output Capacitance

(VDS = 16 Vdc, VGS = 0 Vdc,

f = 1.0 MHz)

Coss

–

184

250

Transfer Capacitance

f = 1.0 MHz)

Crss

–

45

90

SWITCHING CHARACTERISTICS (Note 3.)

Turn–On Delay Time

td(on)

–

11

22

ns

Rise Time

(VDD = 10 Vdc, ID = 3.0 Adc,

VGS =45Vdc

tr

–

58

116

Turn–Off Delay Time

VGS = 4.5 Vdc,

RG = 6.0 Ω)

td(off)

–

17

35

Fall Time

RG 6.0 Ω)

tf

–

20

40

Turn–On Delay Time

td(on)

–

7.0

21

Rise Time

(VDD = 10 Vdc, ID = 3.0 Adc,

VGS =10Vdc

tr

–

32

64

Turn–Off Delay Time

VGS = 10 Vdc,

RG = 6.0 Ω)

td(off)

–

27

54

Fall Time

RG 6.0 Ω)

tf

–

21

42

Gate Charge

SFi

8

QT

–

12.5

18

nC

See Figure 8

(VDS = 16 Vdc, ID = 3.0 Adc,

Q1

–

1.3

–

(VDS 16 Vdc, ID 3.0 Adc,

VGS = 10 Vdc)

Q2

–

2.8

–

Q3

–

2.4

–

SOURCE–DRAIN DIODE CHARACTERISTICS

Forward On–Voltage (Note 2.)

(IS = 3.0 Adc, VGS = 0 Vdc)

(IS = 3.0 Adc, VGS = 0 Vdc, TJ = 125°C)

VSD

–

–

0.79

0.72

1.3

–

Vdc

Reverse Recovery Time

SFi

15

trr

–

23

–

ns

See Figure 15

(IS = 3.0 Adc, VGS = 0 Vdc,

ta

–

18

–

(IS 3.0 Adc, VGS 0 Vdc,

dIS/dt = 100 A/µs)

tb

–

5.0

–

Reverse Recovery Stored Charge

QRR

–

0.025

–

µC

2. Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2%.

3. Switching characteristics are independent of operating junction temperature.