Switching Diodes

1

MA2J113

Silicon epitaxial planar type

For switching circuits

I Features

• Small S-mini type package, allowing high-density mounting

• Ensuring the average forward current capacity I

• High breakdown voltage (V

I Absolute Maximum Ratings T

1 : Anode

2 : Cathode

S-Mini Type Package (2-pin)

Unit : mm

Parameter

Symbol

Rating

Unit

Reverse voltage (DC)

80

V

Peak reverse voltage

80

V

Forward current (DC)

200

mA

Peak forward current

600

mA

Non-repetitive peak forward

1A

Junction temperature

150

°C

Storage temperature

−55 to +150

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Reverse current (DC)

50

nA

= 75 V

500

nA

= 75 V, T

a

= 100°C

100

µA

Forward voltage (DC)

1.1

V

Terminal capacitance

= 0 V, f = 1 MHz

4

pF

= 10 mA, V

R

= 6 V

10

ns

= 0.1 · I

= 100 Ω

I Electrical Characteristics T

Note) 1. Rated input/output frequency: 100 MHz

Marking Symbol: 1D

Noe)

* : t = 1 s

1

2

KA

2.5

± 0.2

1.7

± 0.1

0.4

± 0.1

0.4

± 0.1

Bias Application Unit N-50BU

90%

Pulse Generator

(PG-10N)

R

W.F.Analyzer

(SAS-8130)

R

t

t

δ = 0.05

I

V

R

10%

Input Pulse

Output Pulse

I

t

r

t

p

t

rr

V

R

I

F

t

t

A