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LM5072 датащи(PDF) 4 Page - National Semiconductor (TI) |
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LM5072 датащи(HTML) 4 Page - National Semiconductor (TI) |
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4 / 24 page ![]() Absolute Maximum Ratings (Note 1) If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications. VIN , RTN to VEE (Note 7) -0.3V to 100V RAUX to ARTN -0.3V to 100V ICL_FAUX to VEE -0.3V to 100V DCCL, RCLASS to VEE -0.3V to 7V nPGOOD to ARTN -0.3V to 16V ARTN to RTN -0.3V to 0.3V VCC, OUT to ARTN -0.3V to 16V CS, FB, RT to ARTN -0.3V to 7V COMP, SS to ARTN -0.3V to 5.5V ESD Rating Human Body Model (Note 2) 2000V Lead Soldering Temp. (Note 3) Wave (4 seconds) Infrared (10 seconds) Vapor Phase (75 seconds) 260˚C 240˚C 219˚C Storage Temperature -55˚C to 150˚C Junction Temperature 150˚C Operating Ratings V IN voltage 9V to 70V External voltage applied to V CC 8V to 15V Operating Junction Temperature -40˚C to 125˚C Electrical Characteristics (Note 4) Specifications in standard type face are for T J = +25˚C and those in boldface type apply over the full operating junction temperature range. Unless otherwise specified: V IN = 48V, FOSC = 250kHz. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS Detection and Classification V IN Signature Startup Voltage 1.5 V Signature Resistance 23.25 24.5 26 k Ω Signature Resistor Disengage/ Classification Engage V IN Rising 11.0 12.0 12.6 V Hysteresis 1.9 V Classification Current Turn Off V IN Rising 22 23.5 25 V Classification Voltage 1.213 1.25 1.287 V Supply Current During Classification V IN = 17V 0.7 1.1 mA Line Under Voltage Lock-Out UVLO Release V IN Rising 36 38.5 40 V UVLO Lock out V IN Falling 29.5 31.0 32.5 V UVLO Hysteresis 6 V UVLO Filter 300 µs Power Good VDS Required for Power Good Status 1.3 1.5 1.7 V VDS Hysteresis of Power Good Status 0.8 1.0 1.2 V VGS Required for Power Good Status 4.5 5.5 6.5 V Default Delay Time of Loss-of Power Good Status 30 µs nPGOOD current Source 45 55 65 µA nPGOOD Pull Down Resistance 130 250 Ω nPGOOD Threshold 2.3 2.5 2.7 V Hot Swap RDS(ON) Hot Swap MOSFET Resistance 0.7 1.2 Ω Hot Swap MOSFET Leakage 110 µA Default Inrush Current Limit V DS = 4.0V 120 150 180 mA Default DC Current Limit V DS = 4.0V 380 440 510 mA Front Auxiliary DC Current Limit V DS = 4.0V 470 540 610 mA Inrush Current Limit Programming Accuracy V DS = 4.0V -15 15 % DC Current Limit Programming Accuracy V DS = 4.0V -12 12 % www.national.com 4 |
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