MJD44E3 datasheet(1/2 Pages) ISC

номер детали	MJD44E3

подробное описание детали	isc Silicon NPN Darlington Power Transistor

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производитель	ISC [Inchange Semiconductor Company Limited]

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isc Silicon NPN Darlington Power Transistor

MJD44E3

DESCRIPTION

·

High DC Current Gain

: hFE = 1000(Min)@ IC= 5A

·

Low Collector-Emitter Saturation Voltage

: VCE(sat) = 1.5V(Max)@ IC= 5A

·

Minimum Lot-to-Lot variations for robust device performance

and reliable operation

APPLICATIONS

·

Designed for general-purpose amplifier and low-speed

switching applications

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

VCEO

Collector-Emitter Voltage

80

V

VEBO

Emitter-Base Voltage

7

V

IC

Collector Current-Continuous

10

A

PC

Collector Power Dissipation

@TC=25℃

20

W

Collector Power Dissipation

@Ta=25℃

1.75

Tj

Junction Temperature

150

℃

Tstg

Storage Temperature Range

-55~150

℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal Resistance, Junction to Case

6.25

℃

/W

Аналогичный номер детали - MJD44E3

производитель	номер детали	датащи	подробное описание детали
Motorola, Inc	MJD44E3	80Kb / 4P	NPN DARLINGTON SILICON POWER TRANSISTOR 10 AMPERES 80 VOLTS 20 WATTS
ON Semiconductor	MJD44E3	50Kb / 3P	Darlington Power Transistor DPAK For Surface Mount Applications 10 AMPERES 80 VOLTS, 20 WATTS December, 2005 ??Rev. 4
Continental Device Indi...	MJD44E3	96Kb / 5P	NPN DARLINGTON PLASTIC POWER TRANSISTOR
ON Semiconductor	MJD44E3	202Kb / 4P	Darlington Power Transistor DPAK For Surface Mount Applications February, 2012 - Rev. 10
Motorola, Inc	MJD44E3-1	80Kb / 4P	NPN DARLINGTON SILICON POWER TRANSISTOR 10 AMPERES 80 VOLTS 20 WATTS

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