3 Volt, General Purpose Low Noise High fT Silicon Transistor

Specification Subject to Change Without Notice

M-Pulse Microwave____________________________________________________________________________________

4

576 Charcot Avemue, San Jose, California 95131

Tel (408) 432-1480

Fax (408)) 432-3440

MP4T6325 Series

Typical Performance Curves (MP4T632535)

POWER DERATING CURVES

0

20

40

60

80

10 0

12 0

14 0

16 0

0

2 5

5 0

7 5

100

125

150

175

A M BI EN T TE M P ER A T U R E (C )

M P 4T 63250 0 ( C H I P )

O N I N F IN I T E H E AT S I NK

M P 4T 632 535 (M IC R O -X )

M P 4T 63 2533, 39

(S O T -23, 143) F R E E A I R

GAIN vs FREQUENCY at VCE=3 V and IC =

10 mA

0

2

4

6

8

10

12

14

16

1

10

F R EQ UENCY (G H z)

GTU (M AX )

GAIN BANDWIDTH PRODUCT (fT) vs

COLLECTOR CURRENT at VCE=3 V

0

2

4

6

8

10

12

1

1 0

100

C O LLEC T O R CURRE N T (m A)

NOISE FIGURE and ASSOCIATED GAIN at

VCE = 3 V, 1 GHz vs COLLECTOR CURRENT

0

1

2

3

4

5

6

7

8

9

10

110

10 0

CO LL EC T O R CURRENT (m A)

NO IS E F IG URE (50 O hm s)

AS SO C IATE D G AIN

vs COLLECTOR-BASE VOLTAGE

0.4

0.45

0.5

0.55

0.6

0.65

1

10

C O LLEC TO R -BASE VO LT AG E (Vo lts)

GAIN vs COLLECTOR CURRENT at 2 GHz,

VCE=3 V

0

2

4

6

8

10

12

110

10 0

CO LL EC T O R CURRENT (m A)

MAG

GTU (M AX )

2