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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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VS-SD1700CK датащи(PDF) 2 Page - Vishay Siliconix |
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VS-SD1700CK датащи(HTML) 2 Page - Vishay Siliconix |
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2 / 8 page  VS-SD1700C..K Series www.vishay.com Vishay Semiconductors Revision: 11-Jan-18 2 Document Number: 93539 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Note • The table above shows the increment of thermal resistance RthJ-hs when devices operate at different conduction angles than DC FORWARD CONDUCTION PARAMETER SYMBOL TEST CONDITIONS SD1700C..K UNITS 24 to 36 40 to 45 Maximum average forward current at heatsink temperature IF(AV) 180° conduction, half sine wave Double side (single side) cooled 2080 (1000) 1875 (920) A 55 (85) 55 (85) °C Maximum RMS forward current IF(RMS) 25 °C heatsink temperature double side cooled 3600 3280 A Maximum peak, one cycle forward, non-repetitive surge current IFSM t = 10 ms No voltage reapplied Sinusoidal half wave, initial TJ = TJ maximum 24 000 20 000 t = 8.3 ms 25 150 20 950 t = 10 ms 50 % VRRM reapplied 20 200 16 800 t = 8.3 ms 21 150 17 600 Maximum I2t for fusing I2t t = 10 ms No voltage reapplied 2890 2000 kA2s t = 8.3 ms 2630 1826 t = 10 ms 50 % VRRM reapplied 2040 1415 t = 8.3 ms 1860 1292 Maximum I2 t for fusing I2 t t = 0.1 to 10 ms, no voltage reapplied 28 900 20 000 kA2 s Low level value of threshold voltage VF(TO)1 (16.7 % x x I F(AV) < I < x IF(AV)), TJ = TJ maximum 0.89 0.88 V High level value of threshold voltage VF(TO)2 (I > x I F(AV)), TJ = TJ maximum 1.02 0.99 Low level value of forward slope resistance rf1 (16.7 % x x I F(AV) < I < x IF(AV)), TJ = TJ maximum 0.23 0.31 m High level value of forward slope resistance rf2 (I > x I F(AV)), TJ = TJ maximum 0.21 0.29 Maximum forward voltage drop VFM Ipk = 4000 A, TJ = TJ maximum, tp = 10 ms sinusoidal wave 1.81 2.11 V THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum junction operating temperature range TJ -40 to +150 °C Maximum storage temperature range TStg -55 to +200 Maximum thermal resistance, junction to heatsink RthJ-hs DC operation single side cooled 0.042 K/W DC operation double side cooled 0.020 Mounting force, ± 10 % 22 250 (2250) N (kg) Approximate weight 425 g Case style See dimensions - link at the end of datasheet K-PUK (DO-200AC) R thJ-hs CONDUCTION CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE 180° 0.002 0.002 0.001 0.001 TJ = TJ maximum K/W 120° 0.002 0.002 0.002 0.002 90° 0.003 0.003 0.003 0.003 60° 0.004 0.004 0.004 0.004 30° 0.007 0.007 0.007 0.007 |
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