RMB2S, RMB4S

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Vishay General Semiconductor

Revision: 04-Aug-2020

3

Document Number: 88705

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

Fig. 1 - Maximum Forward Current Derating Curve

Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current

Per Diode

Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode

Fig. 4 - Typical Reverse Leakage Characteristics Per Diode

Fig. 5 - Typical Junction Capacitance Per Diode

0

20

40

60

80

100

120

140

160

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

Aluminum Substrate

Glass Epoxy PCB

Ambient Temperature (°C)

Resistive or Inductive Load

1

10

100

0

5

10

15

20

25

30

35

f = 60 Hz

f = 50 Hz

T

Single Half Sine-Wave

Number of Cycles

1.0 Cycle

0.3

0.5

0.7

0.9

1.1

1.3

1.5

0.01

0.1

1

10

Instantaneous Forward Voltage (V)

Pulse Width = 300 µs

1 % Duty Cycle

T

T

0

20

40

60

80

100

0.01

0.1

10

100

T

T

Percent of Rated Peak Reverse Voltage (%)

1

0.1

1

10

100

0

5

10

15

20

25

30

1000

Reverse Voltage (V)

T

f = 1.0 MHz

V

p-p