TMG3C60F datasheet(1/2 Pages) ISC

номер детали	TMG3C60F

подробное описание детали	isc Triacs

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производитель	ISC [Inchange Semiconductor Company Limited]

домашняя страница	http://www.iscsemi.cn

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isc website：www.iscsemi.com

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isc Triacs

TMG3C60F

FEATURES

·

With TO-220F insulated package

·

Suitables for general purpose applications where gate high sensitivity is

required. Application on 4Q such as phase control and static switching.

·

Minimum Lot-to-Lot variations for robust device performance and reliable

Operation

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

MIN

UNIT

VDRM

Repetitive peak off-state voltage

600

V

VRRM

Repetitive peak reverse voltage

600

V

IT(RMS)

RMS on-state current (full sine wave)Tj=90℃

3.0

A

ITSM

Non-repetitive peak on-state current tp=10ms

27

A

Tj

Operating junction temperature

-40~125

℃

Tstg

Storage temperature

-40~150

℃

Rth(j-c)

Thermal resistance, junction to case

5.0

℃

/W

ELECTRICAL CHARACTERISTICS (TC=25℃ unless otherwise specified)

SYMBOL

PARAMETER

CONDITIONS

MAX

UNIT

IRRM

Repetitive peak reverse current

VR=VRRM,

VR=VRRM, Tj=110℃

0.01

0.75

mA

IDRM

Repetitive peak off-state current

VD=VDRM,

VD=VDRM, Tj=110℃

0.01

0.75

mA

IGT

Gate trigger current

Ⅰ

-Ⅱ-Ⅲ

VD=12V; RL= 33Ω

15

mA

Ⅳ

15

IH

Holding current

IGT= 0.1A, Gate Open

2.5

mA

VGT

Gate trigger voltage all quadrant VD=12V; RL= 30Ω

1.5

V

VTM

On-state voltage

IT= 4.5A

1.4

V

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