BAS281 datasheet(2/4 Pages) VISHAY

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BAS281, BAS282, BAS283

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Vishay Semiconductors

Rev. 2.0, 16-Nov-2021

Document Number: 85500

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TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 1 - Max. Reverse Power Dissipation vs.

Junction Temperature

Fig. 2 - Reverse Current vs. Junction Temperature

Fig. 3 - Forward Current vs. Forward Voltage

Fig. 4 - Diode Capacitance vs. Reverse Voltage

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER

TEST CONDITION

SYMBOL

MIN.

TYP.

MAX.

UNIT

Forward voltage

IF = 0.1 mA

330

IF = 1 mA

410

IF = 15 mA

1000

Reverse current

VR = VRmax.

200

Diode capacitance

VR = 1 V, f = 1 MHz

1.6

100

125

150

j - Junction Temperature (°C)

15794

R = 60 V

thJA = 540 K/W

- Limit at 100 %

R - Limit at 100 % VR

R - Limit at 80 % VR

0.1

100

1000

100

125

150

15795

VR = VRRM

Tj - Junction Temperature (°C)

0.5

1.5

2.0

VF - Forward Voltage (V)

15796

j = 25 °C

j = 125 °C

0.1

100

1000

0.01

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

0.1

100

R - Reverse Voltage (V)

15797

f = 1 MHz

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