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SIDR402DP датащи(PDF) 3 Page - Vishay Siliconix

номер детали SIDR402DP
подробное описание детали  N-Channel 40 V (D-S) MOSFET
PDF  9 Pages
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производитель  VISHAY [Vishay Siliconix]
домашняя страница  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SIDR402DP датащи(HTML) 3 Page - Vishay Siliconix

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SiDR402DP
www.vishay.com
Vishay Siliconix
S17-1076-Rev. A, 10-Jul-17
3
Document Number: 75606
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
10
100
1000
10000
0
50
100
150
200
250
00.5
11.5
22.5
Axis Title
V
DS - Drain-to-Source Voltage (V)
2nd line
V
GS = 10 V thru 4 V
V
GS = 3 V
V
GS = 2 V
10
100
1000
10000
0.0006
0.0007
0.0008
0.0009
0.0010
0.0011
0
20406080
100
Axis Title
I
D - Drain Current (A)
2nd line
V
GS = 4.5 V
V
GS = 10 V
10
100
1000
10000
0
2
4
6
8
10
0
22446688
110
Axis Title
Q
g - Total Gate Charge (nC)
2nd line
V
DS = 10 V, 20 V, 30 V
I
D = 20 A
10
100
1000
10000
0
50
100
150
200
250
012345
Axis Title
V
GS - Gate-to-Source Voltage (V)
2nd line
T
C = 25 °C
T
C =-55 °C
T
C = 125 °C
10
100
1000
10000
0
2200
4400
6600
8800
11 000
0
8
16
24
32
40
Axis Title
V
DS - Drain-to-Source Voltage (V)
2nd line
C
rss
C
oss
C
iss
10
100
1000
10000
0.6
0.8
1.0
1.2
1.4
1.6
1.8
-50
-25
0
255075
100
125
150
Axis Title
T
J - Junction Temperature (°C)
2nd line
I
D = 20 A
V
GS = 10 V
V
GS = 4.5 V



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