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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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2SD1587 датащи(PDF) 1 Page - Inchange Semiconductor Company Limited |
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2SD1587 датащи(HTML) 1 Page - Inchange Semiconductor Company Limited |
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1 / 2 page  isc website：www.iscsemi.com isc & iscsemi is registered trademark 1 isc Silicon NPN Power Transistor 2SD1587 DESCRIPTION · High Collector Current:: IC= 2.0A · Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max)@IC= 500mA · Complement to Type 2SB1096 · Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS · Designed for power supplies or a variety of drives in audio and other equipment. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 150 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current-Continuous 2.0 A ICM Collector Current-Peak 3.0 A IB Base Current-Continuous 1.0 A PC Total Power Dissipation @ TC=25℃ 25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ |
Аналогичный номер детали - 2SD1587 |
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Аналогичное описание - 2SD1587 |
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