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2SCR542D датащи(PDF) 1 Page - Inchange Semiconductor Company Limited

номер детали 2SCR542D
подробное описание детали  isc Silicon NPN Power Transistors
PDF  2 Pages
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производитель  ISC [Inchange Semiconductor Company Limited]
домашняя страница  http://www.iscsemi.cn
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2SCR542D датащи(HTML) 1 Page - Inchange Semiconductor Company Limited

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isc Website：www.iscsemi.com
isc & iscsemi is registered trademark
1
isc Silicon NPN Power Transistors
2SCR542D
DESCRIPTION
·
DC Current Gain hFE :200-500@ IC= 0.5A
·
Collector-Emitter Breakdown Voltage
: V(BR) CEO= 30V(Min)
·
Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·
Designed for use in general purpose amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
30
V
VCEO
Collector-Emitter Voltage
30
V
VEBO
Emitter-Base Voltage
6.0
V
IC
Collector Current-Continuous
5.0
A
ICM
Collector Current-Pulse
10
A
PC
Collector Power Dissipation
TC=25℃
10
W
Tj
Junction Temperature
150
℃
Tstg
Storage Ttemperature Range
-65~150
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal Resistance,Junction to Case
12.5
℃
/W


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