ESDM1053 datasheet(2/6 Pages) ONSEMI

номер детали	ESDM1053

подробное описание детали	ESD Protection Diodes Micro?뭦ackaged Diodes for ESD Protection

PDF	6 Pages

Scroll/Zoom	100%

производитель	ONSEMI [ON Semiconductor]

домашняя страница	http://www.onsemi.com

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ESDM1053

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Reverse Working Voltage

VRWM

I/O Pin to GND

5.5

Breakdown Voltage

VBR

IT = 1 mA, I/O Pin to GND

5.8

6.7

9.0

Reverse Leakage Current

VRWM = 5.5 V, I/O Pin to GND

0.05

Clamping Voltage

TLP (Note 1)

IPP = 8 A

IPP = 16 A

IPP = 30 A

6.7

7.5

9.0

Dynamic Resistance

RDYN

I/O Pin to GND, 100 ns TLP

0.10

Reverse Peak Pulse Current

IPP

IEC61000−4−5 (8x20 ms)

5.0

6.0

Clamping Voltage (8x20 ms)

IPP = 1.0 A

IPP = 5.0 A

6.0

7.0

8.5

Junction Capacitance

VR = 0 V, f = 1 MHz

5.5

7.0

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

1. ANSI/ESD STM5.5.1 − Electrostatic Discharge Sensitivity Testing using Transmission Line Pulse (TLP) Model.

TLP conditions: Z0 = 50 W, tp = 100 ns, tr = 1 ns, averaging window; t1 = 70 ns to t2 = 90 ns.

ORDERING INFORMATION

Device

Package

Shipping†

ESDM1053FCT5G

DSN2

(Pb−Free)

10,000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

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