© Semiconductor Components Industries, LLC, 2020

September, 2020 − Rev. 0

1

Publication Order Number:

NVC040N120SC1/D

MOSFET – N‐Channel,

Silicon Carbide

1200 V, 40 mW

NVC040N120SC1

Description

Silicon Carbide (SiC) MOSFET uses a completely new technology

that provide superior switching performance and higher reliability

compared to Silicon. In addition, the low ON resistance and compact

chip size ensure low capacitance and gate charge. Consequently,

system benefits include highest efficiency, faster operation frequency,

increased power density, reduced EMI, and reduced system size.

Features

Applications

www.onsemi.com

DIE DIAGRAM

Die Information

S Wafer Diameter

6 inch

S Die Size

4,270 x 3,560 mm

⋅ Top

Ti/TiN/Al

5 mm

⋅ Back

Ti/NiV/Ag

S Die Thickness

Typ. 200 mm

S Metallization

S Gate Pad Size

604 x 415 mm

S1

S3

S2

G

D

S

G

1200 V

56 mW @ 20 V

60 A

N−CHANNEL MOSFET