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MSK4401D датащи(PDF) 2 Page - M.S. Kennedy Corporation

номер детали MSK4401D
подробное описание детали  29 AMP, 75V, 3 PHASE MOSFET BRIDGE WITH INTELLIGENT INTEGRATED GATE DRIVE
PDF  5 Pages
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производитель  MSK [M.S. Kennedy Corporation]
домашняя страница  http://www.mskennedy.com
Logo MSK - M.S. Kennedy Corporation

MSK4401D датащи(HTML) 2 Page - M.S. Kennedy Corporation

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All Inputs Off
f=20KHz, 50% Duty Cycle
VIN=0V
VIN=5V
ID=250µA, All Inputs Off
VDS=70V
ID=29A
V+=29V, RL=1
ID=29A
SWR Resistor=
SWR Resistor=
SWR Resistor=
SWR Resistor=
SWR=Open
SWR=12K
ISD=29A
ISD=10A, di/dt=100A/µS
mAmp
mAmp
Volts
Volts
Volts
Volts
µAmp
µAmp
V
µAmp
V
nSec
nSec
µSec
µSec
µSec
µSec
µSec
µSec
Volts
nSec
75V
16V
-0.3V to VBIAS +0.3V
29A
41A
High Voltage Supply
Bias Supply
Logic Input Voltages
Continuous Output Current
Peak Output Current
ABSOLUTE MAXIMUM RATINGS
V+
VBIAS
VIND
IOUT
IPK
3.0°C/W
-55°C to +125°C
+300°C
-40°C to +85°C
+150°C
θJC
TST
TLD
TC
TJ
Parameter
ELECTRICAL SPECIFICATIONS
Units
Max.
8
25
7.6
8.1
0.8
-
140
+10
-
250
1.25
-
-
2
8
8
2
7.0
1.2
-
-
MSK 4401
Typ.
6
12.5
6.6
7.1
-
-
100
-
-
-
-
120
81
0.5
5
5
0.5
5.0
0.6
2.5
120
Min.
-
-
5.6
6.1
-
2.7
55
-10
70
-
-
-
-
-
-
-
-
3.0
0.3
-
-
Test Conditions
CONTROL SECTION
VBIAS Quiescent Current
VBIAS Operating Current
Undervoltage Threshold (Falling)
Undervoltage Threshold (Rising)
Low Level Input Voltage
High Level Input Voltage
Low Level Input Current
High Level Input Current
OUTPUT BRIDGE
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Drain-Source On Voltage
Drain-Source On Resistance
(Each FET, for thermal calculations only)
SWITCHING CHARACTERISTICS
Rise Time
Fall Time
Enable Turn-On Prop Delay (Lower)
Enable Turn-Off Prop Delay (Lower)
Enable Turn-On Prop Delay (Upper)
Enable Turn-Off Prop Delay (Upper)
Dead Time
Dead Time
SOURCE-DRAIN DIODE CHARACTERISTICS
Forward Voltage
Reverse Recovery Time
Thermal Resistance
(Output Switches @125°C)
Storage Temperature Range
Lead Temperature Range
(10 Seconds)
Case Operating Temperature
Junction Temperature
Rev. E 11/04
2
Guaranteed by design but not tested. Typical parameters are representative of actual device performance but are for reference only.
VBIAS=+12V, V+=28V, RSENSE A,B=Ground, DIS=0V, EN=0V, SWR=open unless otherwise specified.
Measured using a 300µSec pulse with a 2% duty cycle.
On Resistance is specified for the internal MOSFET for thermal calculations. It does not include the package pin resistance.
1
2
3
4
NOTES:
1
1
1
1
1
1
1
3
3
1
1
1
1
1
1
2
Tc=+25°C unless otherwise specified
ID=29A
-
-
0.013
4



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