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DS20006658A-page 1

VP0106

Features

• Free from Secondary Breakdown

• Low Power Drive Requirement

• Ease of Paralleling

• Excellent Thermal Stability

• Integral Source-Drain Diode

• High Input Impedance and High Gain

Applications

• Motor Controls

• Converters

• Amplifiers

• Switches

• Power Supply Circuits

• Drivers (Relays, Hammers, Solenoids, Lamps,

Memories, Displays, Bipolar Transistors, etc.)

General Description

The VP0106 low-threshold Enhancement-mode

(normally-off) transistors use a vertical DMOS structure

and a well-proven silicon-gate manufacturing process.

This combination produces a device with the power

handling capabilities of bipolar transistors and the high

input impedance and positive temperature coefficient

inherent in MOS devices. Characteristic of all MOS

structures, these devices are free from thermal

runaway and thermally induced secondary breakdown.

Microchip’s vertical DMOS FETs are ideally suited to a

wide range of switching and amplifying applications

where very low threshold voltage, high breakdown

voltage, high input impedance, low input capacitance,

and fast switching speeds are desired.

Package Type

See Table 3-1 for pin information.

GATE

SOURCE

DRAIN

3-lead TO-92

(Top view)

P-Channel Enhancement-Mode Vertical DMOS FET