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MSK4251S датащи(PDF) 2 Page - M.S. Kennedy Corporation

номер детали MSK4251S
подробное описание детали  10 AMP, 75V, H-BRIDGE MOSFET BRUSHED MOTOR CONTROLLER
PDF  6 Pages
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производитель  MSK [M.S. Kennedy Corporation]
домашняя страница  http://www.mskennedy.com
Logo MSK - M.S. Kennedy Corporation

MSK4251S датащи(HTML) 2 Page - M.S. Kennedy Corporation

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@ 64V, +150°C Junction
@ 10 Amps
@10Amps, +150°C Junction
@ 10 Amps, 150°C Junction
@ 10 Amps, Each FET
IF=10 Amps, di/dt=100A/µS
POWER SUPPLY REQUIREMENTS
+Vcc
-Vcc
PWM
Free Running Frequency
CONTROL
Transconductance
Current Monitor
Output Offset
ERROR AMP
Input Voltage Range
Slew Rate
Output Voltage Swing
Gain Bandwidth Product
Large Signal Voltage Gain
75V
±13.5V
+16V
-18V
10A
20A
High Voltage Supply
Current Command Input
Continuous Output Current
Peak Output Current
@ +15V
@ -15V
±10 Amps Output
±10 Amps Output
@ 0 Volts Command
mA
mA
KHz
Amp/Volt
V/Amp
mAmp
Volts
V/µSec
Volts
MHz
V/mV
ABSOLUTE MAXIMUM RATINGS
V+
VIN
+Vcc
-Vcc
IOUT
IPK
3.0°C/W
-40°C to +150°C
+300°C
-40°C to +85°C
+150°C
θJC
TST
TLD
TC
TJ
Parameter
ELECTRICAL SPECIFICATIONS
Units
Max.
85
35
28
2.2
0.575
±35.0
-
-
-
-
-
MSK 4251
Typ.
70
17
25
2
0.5
±5.0
±12
8
±13
6.5
275
Test Conditions
Min.
-
-
22
1.8
0.425
-
±11
6.5
±12
-
175
Thermal Resistance @ 125°C
Storage Temperature Range
Lead Temperature Range
(10 Seconds)
Case Operating Temperature
MSK4251
Junction Temperature
All Ratings: Tc=+25°C Unless Otherwise Specified
2
NOTES:
1
Guaranteed by design but not tested. Typical parameters are representative of actual device
performance but are for reference only.
2
±Vcc=+15V, V+=28V unless otherwise specified.
3
This is to be used for MOSFET thermal calculation only.
4
Measurements do not include offset current at 0V current command.
5
Continuous operation at or above absolute maximum ratings may adversly effect the device performance
and/or life cycle.
nSec
nSec
µAmps
Volts
Volts
Ω
Volts
nSec
µSec
OUTPUT
Rise Time
Fall Time
Leakage Current
Voltage Drop Across Bridge (1 Upper and 1 Lower)
Voltage Drop Across Bridge (1 Upper and 1 Lower)
Drain-Source On Resistance (Each MOSFET)
Diode VSD
trr
Dead Time
-
-
750
0.3
0.6
0.026
2.6
-
-
100
100
-
-
-
-
-
280
2
-
-
-
-
-
-
-
-
-
4
4
3
1
1
1
1
1
1
1
1
1
1
1
1
1
Rev. B 1/05
1
2
5



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