3

3

Intrinsic Diode

Each MOSFET V+=70V

Ω

OUTPUT CHARACTERISTICS

RDS (ON) 1 4

VDS(ON) Voltage

Instantaneous Forward Voltage

Reverse Recovery Time

1

Leakage Current

Vcc

SUPPLY CHARACTERISTICS

Quiescent Bias Current

Vcc Voltage Range 1

LOGIC CONTROL INPUTS,ALI,BLI,AHI,BHI and DIS

1

Input Voltage LO

Input Voltage HI

SWITCHING CHARACTERISTICS

1

Rise Time

Fall Time

Dead Time

V+

θJC

ABSOLUTE MAXIMUM RATINGS

Parameter

ELECTRICAL SPECIFICATIONS

Units

Ω

V

V

nS

uA

mA

V

V

V

uA

nS

nS

nS

Max.

0.013

0.52

1.3

280

25

50

16

0.8

-

135

-

-

-

MSK 4226

Typ.

-

0.45

1.0

-

1.0

29

12

-

-

-

50

170

100

Min.

-

-

-

-

-

-

9

-

2.7

-

-

-

-

Test Conditions

2

2

NOTES:

1

Guaranteed by design but not tested. Typical parameters are representative of actual device performance but are for reference only.

2

Vcc=+12V, V+=28V, RSENSE A,B=Ground, DIS=0V unless otherwise specified.

3

Measured using a 300µS pulse with a 2% Duty Cycle.

4

On Resistance is specified for the Internal MOSFET for Thermal Calculations. It does not include the package pin resistance.

Tc= +25°C Unless Otherwise Specified

Rev. B 11/04

High Voltage Supply

Logic Supply

Continuous Output Current

Peak Output Current

Output Voltage Range

Thermal Resistance

(Output Switches @ 125°C)

75V

16V

20A

40A

GND -2V min. to V + max.

3.0°C/W

Storage Temperature Range

Lead Temperature Range

(10 Seconds)

Case Operating Temperature

MSK4226

Junction Temperature

-55°C to +125°C

300°C

-40°C to +85°C

+150°C