SAMWIN
SW740
REV0.2
04.11.1
General Description
This power MOSFET is produced with advanced
VDMOS process, planar stripe.This technology
enable power MOSFET to have better characteristics,
such as fast switching time, low on resistance, low
gate charge and especially excellent avalanche
characteristics. It is mainly suitable for half bridge or
full bridge resonant topology like a electronic ballast,
and also low power switching mode power appliances.
Features
N-Channel MOSFET
BV
DSS (Minimum)
R
DS(ON) (Maximum)
I
D
Qg (Typical)
P
D (@TC=25
)
: 400V
: 0.55 ohm
: 10A
: 45 nc
: 134 W
G
S
D
Absolute Maximum Ratings
Symbol
Parameter
Value
Units
V
DSS
Drain to Source Voltage
400
V
Continuous Drain Current (@Tc=25℃)
10
A
Continuous Drain Current (@Tc=100℃)
6.3
A
I
DM
Drain Current Pulsed
(Note 1)
40
A
V
GS
Gate to Source Voltage
±30
V
E
AS
Single Pulsed Avalanche Energy
(Note 2)
450
mJ
E
AR
Repetitive Avalanche Energy
(Note 1)
13.4
mJ
dv/dt
Peak Diode Recovery dv/dt
(Note 3)
5.5
V/ns
Total Power Dissipation (@Tc=25℃)
134
W
Derating Factor above 25℃
1.08
W/℃
T
STG,TJ
Operating junction temperature &Storage temperature
-55~+150
℃
T
L
Maximum Lead Temperature for soldering purpose, 1/8 from Case
for 5 seconds.
300
℃
P
D
I
D
Thermal Characteristics
℃/W
62.5
-
-
Thermal Resistance, Junction-to-Ambient
R
JA
℃/W
-
0.5
-
Thermal Resistance, Case-to-Sink
R
CS
℃/W
0.93
-
-
Thermal Resistance, Junction-to-Case
R
JC
Max
Typ
Min
Units
Value
Parameter
Symbol
1/6
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