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SAMWIN
SW50N06
REV2.1
05.07.21
3/6
Fig 1. On-State Characteristics
Fig 3. On Resistance Variation vs.
Drain Current and Gate Voltage
Fig 4. On State Current vs.
Allowable Case Temperature
Fig 2. Transfer Characteristics
Fig 6. Gate Charge Characteristics
Fig 5. Capacitance Characteristics
(Non-Repetitive)
150
25
23
4
5
6
78
9
10
10
0
10
1
10
2
25
oC
V
GS
, Gate-Source Voltage [V]
150
oC
Note:
1.V
DS
=50V
2.250us pulse test.
10
-1
10
0
10
1
10
0
10
1
10
2
4.5V
V
GS
top: 15V
10V
8V
7V
6V
5.5V
5V
bottom:4.5V
V
DS
,Drain-to-Source voltage [V]
0
20
40
60
80 100 120 140 160 180 200
0
10
20
30
40
50
60
70
VGS=10V
VGS=20V
I
D
, Drain Current [A]
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
10
0
10
1
10
2
Note:
1.v
GS
=0v
2.250us test
V
SD
,Source-Drain Voltage[V]
5
10
15
20
25
30
35
0
500
1000
1500
2000
2500
3000
Note:
1.V
GS
=0V
2.f=1MHz.
C
rss
C
iss
C
oss
V
DC
,Drain-Source Voltage [V]
Ciss = Cgs+Cgd(Cds=shorted)
Coss= Cds+Cgd
Crss = Cgd
0
5
10
15
20
25
30
35
40
45
0
2
4
6
8
10
12
V
DS
=30V
V
DS
=48V
Q
G
,Total Gate Charge [nC]
Note:I
D
=50A
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