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SISF04DN датащи(PDF) 3 Page - Vishay Siliconix

номер детали SISF04DN
подробное описание детали  Common Drain Dual N-Channel 30 V (S1-S2) MOSFET
PDF  9 Pages
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производитель  VISHAY [Vishay Siliconix]
домашняя страница  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

SISF04DN датащи(HTML) 3 Page - Vishay Siliconix

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SiSF04DN
www.vishay.com
Vishay Siliconix
S19-0764-Rev. A, 02-Sep-2019
3
Document Number: 77230
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Output Characteristics
On-Resistance vs. Source Current and Gate Voltage
Gate Charge
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
10
100
1000
10000
0
20.0
40.0
60.0
80.0
100.0
0
0.5
1.0
1.5
2.0
2.5
3.0
Axis Title
V
S1S2 - Source-to-Source Voltage (V)
V
GS = 3 V
V
GS = 10V thru 4 V
10
100
1000
10000
0
0.001
0.002
0.003
0.004
0.005
0.006
0
20406080
100
Axis Title
I
S1S2 - Source Current (A)
V
GS = 10 V
V
GS = 4.5 V
10
100
1000
10000
0
2
4
6
8
10
0
10203040
Q
g - Total Gate Charge (nC)
I
D = 5 A
V
DS = 15 V
V
DS = 24 V
V
DS = 7.5 V
Note: for one channel only
10
100
1000
10000
0
20
40
60
80
100
01234
Axis Title
V
GS - Gate-to-Source Voltage (V)
T
C = 125 °C
T
C = 25 °C
T
C = -55 °C
10
100
1000
10000
0
500
1000
1500
2000
2500
3000
0
5
10
15
20
25
V
DS - Drain-to-Source Voltage (V)
C
iss
C
rss
C
oss
Note: for one channel only
10
100
1000
10000
0.6
0.8
1.0
1.2
1.4
1.6
-50
-25
0
25
50
75
100
125
150
Axis Title
T
J - Junction Temperature (°C)
I
D = 7 A
V
GS = 4.5 V
V
GS = 10 V



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