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VRF2933MP датащи(PDF) 3 Page - Microchip Technology

номер детали VRF2933MP
подробное описание детали  50 V, 300 W, 150 MHz RF Power MOSFET
PDF  14 Pages
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производитель  MICROCHIP [Microchip Technology]
домашняя страница  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

VRF2933MP датащи(HTML) 3 Page - Microchip Technology

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Table 1-4. Dynamic Characteristics
Symbol
Characteristic
Test Conditions
Min
Typ
Max
Unit
Ciss
Input capacitance
VGS = 0 V, VDS = 50 V, f = 1 MHz
740
pF
Coss
Output capacitance
400
Crss
Reverse transfer
capacitance
32
The following table shows the functional characteristics of the VRF2933(MP) device. TC = 25 °C unless otherwise
specified.
Table 1-5. Functional Characteristics
Parameter Characteristics
Test Conditions
Min
Typ
Max
Unit
GPS
Common source amplifier
power gain
f1 = 30 MHz, VDD = 50 V, IDQ = 250
mA, Pout = 300 W
20
25
dB
η
Drain efficiency
f1 = 30 MHz, VDD = 50 V, IDQ = 250
mA, Pout = 300 W CW
50
%
Ψ
Electrical ruggedness
VSWR 5:1
f1 = 30 MHz, VDD = 50 V, IDQ = 250
mA, Pout = 300 W CW
70:1 VSWR — all phase angles,
0.2 ms × 20% duty factor
No degradation in output power
1.3
Typical Performance Curves
This section shows the typical performance curves of the VRF2933(MP) device.
Figure 1-1. Output Characteristics
Figure 1-2. Transfer Characteristics
VRF2933, VRF2933MP
Device Specifications
© 2022 Microchip Technology Inc.
and its subsidiaries
Datasheet
DS00004434A-page 3



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