PI5USB2546 datasheet(6/31 Pages) DIODES

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1/18/2017

2016-11-0004

PT0493-4

PI5USB2546

Electrical Characteristics, High-bandwidth Switch

4.5V≤V

IN≤5.5V; TJ=-40°

C to +125°C; VEN =VIN, VILIM_SEL=VIN, VCTL1= VCTL2= VCTL3=VIN, R/FAULT=R/STATUS=10kΩ RILIM_HI=20kΩ,

RILIM_LO=80.6kΩ, Positive currents are into pins. Typical values are at 25°C. All voltages are with respect to GND. unless otherwise specified.

Symbol

Description

Test Conditions

Min.

Typ.

Max.

Unit

HIGH_BANDWIDTH ANALOG SWITCH

DP/DM switch on resistance

VDP/DM_OUT= 0V, IDP/DM_IN= 30mA

Ω

VDP/DM_OUT= 2.4V, IDP/DM_IN= -15mA

Ω

Switch resistance mismatch

between DP/DM channels

VDP/DM_OUT= 0V, IDP/DM_IN= 30mA

0.05

0.15

Ω

VDP/DM_OUT= 2.4V, IDP/DM_IN= -15mA

0.05

0.15

Ω

DP/DM switch off-state

capacitance

(1)

VEN=0V, VDP/DM_IN= 0.3V,

Vac= 0.6VPK-PK, f=1MHz

4.5

DP/DM switch on-state

capacitance

(2)

VDP/DM_IN= 0.3V,Vac= 0.6VPK-PK, f = 1MHz

5.4

6.2

OIRR

Off-state isolation

(3)

VEN = 0V, f = 250MHz

XTALK

Off-state cross channel isolation

(3)

f = 250MHz

IOFF

Off-state leakage current

VEN = 0V, VDP/DM_IN = 3.6V, VDP/DM_OUT =

0V, measure IDP/DM_OUT

0.1

1.5

A

Bandwidth(-3dB)

(3)

RL =50Ω

2.0

GHz

tpd

Propagation delay

(3)

0.25

tSK

Skew between opposite transitions

of the same port(tPHL – tPLH)

0.1

0.2

Note:

(1) The resistance in series with the parasitic capacitance to GND is typically 250 Ω.

(2) The resistance in series with the parasitic capacitance to GND is typically 150 Ω.

(3) These parameters are provided for reference only and do not constitute part of Pericom's published device specifications for purposes of Pericom's

product warranty.

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