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TSAL7600 датащи(PDF) 2 Page - Vishay Siliconix

номер детали TSAL7600
подробное описание детали  High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs
PDF  5 Pages
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производитель  VISHAY [Vishay Siliconix]
домашняя страница  http://www.vishay.com
Logo VISHAY - Vishay Siliconix

TSAL7600 датащи(HTML) 2 Page - Vishay Siliconix

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TSAL7600
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 24-Aug-11
2
Document Number: 81015
For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
Fig. 2 - Forward Current Limit vs. Ambient Temperature
0
20
40
60
80
100
120
140
160
180
0
1020
3040506070
8090100
21211
Tamb - Ambient Temperature (°C)
RthJA = 230 K/W
0
20
40
60
80
100
120
0
10
203040
50607080
90 100
Tamb - Ambient Temperature (°C)
21212
RthJA = 230 K/W
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Forward voltage
IF = 100 mA, tp = 20 ms
VF
1.35
1.6
V
IF = 1 A, tp = 100 μs
VF
2.6
3
V
Temperature coefficient of VF
IF = 1 mA
TKVF
- 1.8
mV/K
Reverse current
VR = 5 V
IR
10
μA
Junction capacitance
VR = 0 V, f = 1 MHz, E = 0
Cj
25
pF
Radiant intensity
IF = 100 mA, tp = 20 ms
Ie
15
25
75
mW/sr
IF = 1 A, tp = 100 μs
Ie
120
200
mW/sr
Radiant power
IF = 100 mA, tp = 20 ms
φe
35
mW
Temperature coefficient of
φe
IF = 20 mA
TK
φe
- 0.6
%/K
Angle of half intensity
ϕ
± 30
deg
Peak wavelength
IF = 100 mA
λp
940
nm
Spectral bandwidth
IF = 100 mA
Δλ
50
nm
Temperature coefficient of
λp
IF = 100 mA
TK
λp
0.2
nm/K
Rise time
IF = 100 mA
tr
800
ns
Fall time
IF = 100 mA
tf
800
ns
Virtual source diameter
d
1.8
mm



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