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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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PI3USB4000DQ датащи(PDF) 4 Page - Diodes Incorporated |
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PI3USB4000DQ датащи(HTML) 4 Page - Diodes Incorporated |
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4 / 9 page  4 PI3USB4000DQ A Product Line of Diodes Incorporated www.diodes.com January 2021 Diodes Incorporated PI3USB4000DQ Document Number DS41993 Rev 1-2 Storage Temperature ..........................................................–65°C to +150°C Supply Voltage (VDD) to Ground Potential .........................–0.3V to +6V Channel Input/Output Voltage (Lx+/-) .................................–0.3V to +6V Channel Input/Output Voltage (C0+/-) ...............................–0.3V to +24V Reference Pin Voltage (REF) to Ground Potential..............–0.3V to +24V Control Pins Input Voltage (SEL)............................................–0.3V to +6V ESD (All Pins)..............................................2KV (HBM) and 1KV (CDM) Channel Input/Output Current (Lx/C0)...........................................±25mA Note: Stresses greater than those listed under MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rat- ing only and functional operation of the device at these or any other conditions above those indicated in the operational sec- tions of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. Maximum Ratings (Above which useful life may be impaired. For user guidelines, not tested.) Recommended Operating Conditions Symbol Description Test Conditions Min. Typ. Max. Units VDD Power Supply 2.7 3.3 5.5 V VI/O Analog Voltage Range 0 5.5 V VI Voltage Range for Control Pins 0 5.5 V IDD Current Consumption in Normal Operation VDD =3.3V, VIO =0V, SEL= GND or VDD, chip enabled 35 45 µA IDD_OVP Current Consumption in OVP VDD=3.3V, VC0+/VC0-=5.5V, SEL=GND or VDD, chip enabled 35 µA TA Operating Temperature Range -40 125 oC DC Electrical Characteristics for Switching over Operating Range (TA = -40°C to 125°C, Typical values are at VDD = 3.3V, TA = 25°C, REF=NC (unless otherwise noted)) Parameter Description Test Conditions Min. Typ. Max. Units Control Pins – SEL VIH - cntrl signals Input HIGH Voltage for SEL VDD = 2.7-5.5V 1.2 V VIL - cntrl signals Input LOW Voltage for SEL VDD = 2.7-5.5V 0.6 V IIH Input HIGH Current for SEL VI = 5.5V -1 1 µA IIL Input LOW Current for SEL VI = 0V -1 1 µA High Speed IO – L0/L1/C0 VOVP CO± OVP trigger voltage 4.6 4.75 5.0 V Ron ON resistance VI/O = 0V, 0.4V, Ion = –8 mA 5 10 Ω Δ Ron On resistance between + and – channel VI/O = 0V, 0.4V, Ion = –8 mA 0.5 1 Ω Ron_Flat ON resistance flatness VI/O = 0V, 0.4V, Ion = –8 mA 0.2 0.5 Ω Ioff CO± Power-off leakage VDD = 0V, VCO± = 0-3.6V -1 1 µA IOC Channel off leakage current VDD = 3.3V, VLx± = 0-3.6V, channel is off -1 1 µA ION Channel on leakage current VDD = 3.3V, VLx± = 0-3.6V, channel is on -1 1 µA |
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