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TMS28F004AEB60CDCDL датащи(PDF) 39 Page - Texas Instruments

номер детали TMS28F004AEB60CDCDL
подробное описание детали  524288 BY 8-BIT/262144 BY 16-BIT AUTO-SELECT BOOT-BLOCK FLASH MEMORIES
PDF  80 Pages
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TMS28F004AEB60CDCDL датащи(HTML) 39 Page - Texas Instruments

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TMS28F004Axy, TMS28F400Axy
524288 BY 8-BIT/262144 BY 16-BIT
AUTO-SELECT BOOT-BLOCK FLASH MEMORIES
SMJS829A – JANUARY 1996 – REVISED AUGUST 1997
39
POST OFFICE BOX 1443
• HOUSTON, TEXAS 77251–1443
switching characteristics for TMS28F004AEy and TMS28F400AEy over recommended ranges of
supply voltage (commercial and extended temperature ranges) (continued)
ALT
’28F004AEy 80
’28F400AEy 80
PARAMETER
ALT.
SYMBOL
3-V VCC
RANGE
5-V VCC
RANGE
UNIT
MIN
MAX
MIN
MAX
ta(A)
Access time from A0 – A17 (see Note 15)
tAVQV
150
80
ns
ta(E)
Access time from E
tELQV
150
80
ns
ta(G)
Access time from G
tGLQV
90
40
ns
tc(R)
Cycle time, read
tAVAV
150
80
ns
td(E)
Delay time, E low to low-impedance output
tELQX
0
0
ns
td(G)
Delay time, G low to low-impedance output
tGLQX
0
0
ns
tdis(E)
Disable time, E to high-impedance output
tEHQZ
80
30
ns
tdis(G)
Disable time, G to high-impedance output
tGHQZ
60
30
ns
th(D)
Hold time, DQ valid from A0 – A17, E, or G, whichever occurs first
(see Note 15)
tAXQX
0
0
ns
tsu(EB)
Setup time, BYTE from E low
tELFL
tELFH
5
5
ns
td(RP)
Output delay time from RP high
tPHQV
800
450
ns
tdis(BL)
Disable time, BYTE low to DQ8 – DQ15 in the high-impedance state
tFLQZ
60
30
ns
ta(BH)
Access time from BYTE going high
tFHQV
150
80
ns
NOTE 15: A–1 – A17 for byte-wide



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