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STTH20004TV1 датащи(PDF) 4 Page - STMicroelectronics

номер детали STTH20004TV1
подробное описание детали  Ultrafast high voltage rectifier
PDF  6 Pages
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производитель  STMICROELECTRONICS [STMicroelectronics]
домашняя страница  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STTH20004TV1 датащи(HTML) 4 Page - STMicroelectronics

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Figure 7: Reverse recovery softness factor
versus dIF/dt (typical values, per diode)
Figure 8: Relative variations of dynamic
parameters versus junction temperature
Figure 9: Transient peak forward voltage
versus dIF/dt (typical values, per diode)
Figure 10: Forward recovery time versus dIF/dt
(typical values, per diode)
Figure
11:
Junction
capacitance
versus
reverse voltage applied (typical values, per
diode)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0
50
100
150
200
250
300
350
400
450
500
SFACTOR
I
F < 2 x IF(AV)
V
R=200V
T
j=125°C
dIF/dt(A/µs)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
25
50
75
100
125
I
RM
S
FACTOR
I
F=IF(AV)
V
R=200V
Reference: T
j=125°C
Q
RR
t
RR
Tj(°C)
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
5.5
6.0
0
50
100
150
200
250
300
350
400
450
500
VFP (V)
I
F=IF(AV)
T
j=125°C
dIF/dt(A/µs)
0
200
400
600
800
1000
1200
1400
1600
1800
0
50
100
150
200
250
300
350
400
450
500
tfr (ns)
IF=IF(AV)
VFR=1.1 x VF max.
Tj=125°C
dIF/dt(A/µs)
100
1000
10000
1
10
100
1000
C(pF)
F=1MHz
V
OSC=30mVRMS
T
j=25°C
VR(V)



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