NTMTS002N10MC datasheet(2/8 Pages) ONSEMI

2 / 8 page

April, 2021 − Rev. 0

Publication Order Number:

NTMTS002N10MC/D

MOSFET - Power, Single

N-Channel

100 V, 2.3 mW, 236 A

NTMTS002N10MC

Features

• Small Footprint (8x8 mm) for Compact Design

• Low RDS(on) to Minimize Conduction Losses

• Low QG and Capacitance to Minimize Driver Losses

• New Power 88 Package

• These Devices are Pb−Free and are RoHS Compliant

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Parameter

Symbol

Value

Unit

Drain−to−Source Voltage

VDSS

100

Gate−to−Source Voltage

VGS

±20

Continuous Drain

Current RqJC

(Notes 1, 3)

Steady

State

TC = 25°C

236

TC = 100°C

167

Power Dissipation

RqJC (Note 1)

TC = 25°C

255

TC = 100°C

128

Continuous Drain

Current RqJA

(Notes 1, 2, 3)

Steady

State

TA = 25°C

TA = 100°C

31.5

Power Dissipation

RqJA (Notes 1, 2)

TA = 25°C

TA = 100°C

Pulsed Drain Current

TA = 25°C, tp = 10 ms

IDM

900

Operating Junction and Storage Temperature

Range

TJ, Tstg

−55 to

+175

°C

Source Current (Body Diode)

213

Single Pulse Drain−to−Source Avalanche

Energy (IL(pk) = 18.2 A)

EAS

2223

Lead Temperature for Soldering Purposes

(1/8″ from case for 10 s)

260

°C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL RESISTANCE MAXIMUM RATINGS

Parameter

Symbol

Value

Unit

Junction−to−Case − Steady State

RqJC

0.6

°C/W

Junction−to−Ambient − Steady State (Note 2)

RqJA

16.4

1. The entire application environment impacts the thermal resistance values shown,

they are not constants and are only valid for the particular conditions noted.

2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.

3. Maximum current for pulses as long as 1 second is higher but is dependent

on pulse duration and duty cycle.

MARKING

DIAGRAM

www.onsemi.com

N−CHANNEL MOSFET

See detailed ordering, marking and shipping information in the

package dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

G (1)

S (2−4)

D (5−8)

DFNW8

CASE 507AP

002N10MC = Specific Device Code

= Assembly Location

= Wafer Lot Code

= Year Code

= Work Week Code

002N10MC

AWLYWW

V(BR)DSS

RDS(on) MAX

ID MAX

100 V

2.3 mW @ 10 V

236 A

5.3 mW @ 6 V

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