SIRC04DP datasheet(4/9 Pages) VISHAY

номер детали	SIRC04DP

подробное описание детали	N-Channel 30 V (D-S) MOSFET With Schottky Diode

PDF	9 Pages

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производитель	VISHAY [Vishay Siliconix]

домашняя страница	http://www.vishay.com

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SiRC04DP

www.vishay.com

Vishay Siliconix

S21-0840-Rev. B, 09-Aug-2021

Document Number: 62954

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Source-Drain Diode Forward Voltage

Threshold Voltage

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power, Junction-to-Ambient

Safe Operating Area

0.001

0.01

0.1

100

0.0

0.2

0.4

0.6

0.8

1.0

SD - Source-to-Drain Voltage (V)

J = 150 °C

J = 25 °C

-1

-2

-3

-4

-5

-6

100

125

150

J - Temperature (°C)

20 V

10 V

30 V

0.000

0.002

0.004

0.006

0.008

0.010

GS - Gate-to-Source Voltage (V)

J = 125 °C

J = 25 °C

D = 15A

120

160

200

0.001

0.01

0.1

Time (s)

0.01

0.1

100

1000

0.01

0.1

100

DS - Drain-to-Source Voltage (V)

* V

GS > minimum VGS at which RDS(on) is specified

100 μs

100 ms

Limited by R

DS(on)*

1 ms

DM Limited

C = 25 °C

Single Pulse

BVDSS Limited

10 ms

10 s

1 s

D Limited

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