SIR804DP_V01 datasheet(3/13 Pages) VISHAY

номер детали	SIR804DP

подробное описание детали	N-Channel 100 V (D-S) MOSFET

PDF	13 Pages

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производитель	VISHAY [Vishay Siliconix]

домашняя страница	http://www.vishay.com

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SiR804DP

www.vishay.com

Vishay Siliconix

S10-2680-Rev. B, 22-Nov-10

Document Number: 65703

For technical questions, contact: pmostechsupport@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)

Output Characteristics

On-Resistance vs. Drain Current and Gate Voltage

Gate Charge

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

100

0.0

0.5

1.0

1.5

2.0

2.5

VDS - Drain-to-Source Voltage (V)

VGS = 10 V thru 5 V

VGS = 3 V

VGS = 4 V

0.0050

0.0065

0.0080

0.0095

0.0110

0.0125

20406080

100

ID - Drain Current (A)

VGS = 4.5 V

VGS = 10 V

VGS = 7.5 V

0.0

10.6

21.2

31.8

42.4

53.0

ID = 20 A

Qg - Total Gate Charge (nC)

VDS = 75 V

VDS = 25 V

VDS = 50 V

1234

VGS - Gate-to-Source Voltage (V)

TC = 25 °C

TC = 125 °C

TC = - 55 °C

Crss

900

1800

2700

3600

4500

20406080

100

Ciss

VDS - Drain-to-Source Voltage (V)

Coss

0.6

0.9

1.2

1.5

1.8

2.1

- 50

- 25

100

125

150

TJ - Junction Temperature (°C)

VGS = 4.5 V

ID =20A

VGS = 10 V

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