NTMJS1D5N04CL

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2

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain−to−Source Breakdown Voltage

40

V

Drain−to−Source Breakdown Voltage

Temperature Coefficient

2.0

mV/°C

Zero Gate Voltage Drain Current

10

mA

250

Gate−to−Source Leakage Current

100

nA

ON CHARACTERISTICS (Note 4)

Gate Threshold Voltage

1.2

2.0

V

Threshold Temperature Coefficient

−5.6

mV/°C

Drain−to−Source On Resistance

1.7

2.2

mW

1.2

1.4

Forward Transconductance

256

S

CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance

4300

pF

Output Capacitance

1900

Reverse Transfer Capacitance

72

Total Gate Charge

32

nC

Total Gate Charge

70

Threshold Gate Charge

7.0

Gate−to−Source Charge

12

Gate−to−Drain Charge

9.0

Plateau Voltage

2.9

V

SWITCHING CHARACTERISTICS (Note 5)

Turn−On Delay Time

15

ns

Rise Time

140

Turn−Off Delay Time

31

Fall Time

9

DRAIN−SOURCE DIODE CHARACTERISTICS

Forward Diode Voltage

0.81

1.2

V

0.68

Reverse Recovery Time

61

ns

Charge Time

29

Discharge Time

32

Reverse Recovery Charge

80

nC

Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product

performance may not be indicated by the Electrical Characteristics if operated under different conditions.

4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.

5. Switching characteristics are independent of operating junction temperatures.