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NTMJS0D7N03CG датащи(PDF) 2 Page - ON Semiconductor |
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NTMJS0D7N03CG датащи(HTML) 2 Page - ON Semiconductor |
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2 / 7 page ![]() © Semiconductor Components Industries, LLC, 2020 February, 2021 − Rev. 0 1 Publication Order Number: NTMJS0D7N03CG/D MOSFET - Power, Single N-Channel, LFPAK8 30 V, 0.65 mW, 410 A NTMJS0D7N03CG Features • Wide SOA to Improve Inrush Current Management • Advanced LFPAK Package (5x6mm) with Excellent Thermal Conduction • Ultra Low RDS(on) to Improve System Efficiency • These Devices are Pb−Free, Halogen/BFR−Free and are RoHS Compliant Typical Applications • Hot Swap Application • Motor Drive • Power Load Switch • Battery Management MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V Continuous Drain Current RqJC (Note 1) Steady State TC = 25°C ID 410 A TC = 100°C 290 Power Dissipation RqJC (Note 1) TC = 25°C PD 188 W Continuous Drain Current RqJA (Notes 1, 2) Steady State TA = 25°C ID 59 A TA = 100°C 42 Power Dissipation RqJA (Notes 1, 2) TA = 25°C PD 4.0 W Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 900 A Operating Junction and Storage Temperature Range TJ, Tstg −55 to +175 °C Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 40.8 A) EAS 1080 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using a 1 in2, 2 oz. Cu pad. 2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. www.onsemi.com V(BR)DSS RDS(ON) MAX ID MAX 30 V 0.65 mW @ 10 V 410 A G (4) S (1,2,3) N−CHANNEL MOSFET D (5−8) See detailed ordering, marking and shipping information on page 5 of this data sheet. ORDERING INFORMATION MARKING DIAGRAM LFPAK8 CASE 760AA 0D7N03 CG AWLYW G S DD D D SS 1 0D7N03CG = Specific Device Code A = Assembly Location WL = Wafer Lot Y = Year W = Work Week |
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