IRLL110TRPBFA datasheet(2/9 Pages) VISHAY

2 / 9 page

IRLL110, SiHLL110

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Vishay Siliconix

S21-0322-Rev. G, 05-Apr-2021

Document Number: 91320

For technical questions, contact: hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

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e. When mounted on 1" square PCB (FR-4 or G-10 material)

Note

a. When mounted on 1" square PCB (FR-4 or G-10 material)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width

 300 μs; duty cycle  2 %.

THERMAL RESISTANCE RATINGS

PARAMETER

SYMBOL

TYP.

MAX.

UNIT

Maximum junction-to-ambient



(PCB mount) a

RthJA

-60

°C/W

Maximum junction-to-case (drain)

RthJC

-40

SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)

PARAMETER

SYMBOL

TEST CONDITIONS

MIN.

TYP.

MAX.

UNIT

Static

Drain-source breakdown voltage

VDS

VGS = 0 V, ID = 250 μA

100

VDS temperature coefficient

V

DS/TJ

Reference to 25 °C, ID = 1 mA

0.12

V/°C

Gate-source threshold voltage

VGS(th)

VDS = VGS, ID = 250 μA

1.0

2.0

Gate-source leakage

IGSS

VGS = ± 10 V

± 100

Zero gate voltage drain current

IDSS

VDS = 100 V, VGS = 0 V

μA

VDS = 80 V, VGS = 0 V, TJ = 125 °C

250

Drain-source on-state resistance

RDS(on)

VGS = 5.0 V

ID = 0.90 Ab

0.54



VGS = 4.0 V

ID = 0.75 A

0.76

Forward transconductance

gfs

VDS = 25 V, ID = 0.90 A

0.57

Dynamic

Input capacitance

Ciss

VGS = 0 V,

VDS = 25 V,

f = 1.0 MHz, see fig. 5

250

Output capacitance

Coss

-80

Reverse transfer capacitance

Crss

-15

Total gate charge

VGS = 5.0 V

ID = 5.6 A, VDS = 80 V,

see fig. 6 and 13b

6.1

Gate-source charge

Qgs

2.6

Gate-drain charge

Qgd

3.3

Turn-on delay time

td(on)

VDD = 50 V, ID = 5.6 A,

Rg = 12 , RD = 8.4 

-9.3

Rise time

-47

Turn-off delay time

td(off)

-16

Fall time

-18

Internal drain inductance

Between lead,



6 mm (0.25") from

package and center of

die contact

-4.0

Internal source inductance

-6.0

Drain-Source Body Diode Characteristics

Continuous source-drain diode current

MOSFET symbol



showing the



integral reverse



p - n junction diode

1.5

Pulsed diode forward current a

ISM

Body diode voltage

VSD

TJ = 25 °C, IS = 1.5 A, VGS = 0 Vb

2.5

Body diode reverse recovery time

trr

TJ = 25 °C, IF = 5.6 A, dI/dt = 100 A/μsb

110

130

Body diode reverse recovery charge

Qrr

-0.50

0.65

μC

Forward turn-on time

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

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