MF3ICDX21_41_81_SDS

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© NXP Semiconductors N.V. 2015. All rights reserved.

Product short data sheet

COMPANY PUBLIC

Rev. 3.2 — 9 December 2015

145632

4 of 18

NXP Semiconductors

MF3ICDx21_41_81

MIFARE DESFire EV1 contactless multi-application IC

4.

Quick reference data

[1]

Stresses above one or more of the values may cause permanent damage to the device.

[2]

Exposure to limiting values for extended periods may affect device reliability.

[3]

Measured with LCR meter.

5.

Ordering information

Table 1.

Quick reference data [1][2]

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

input frequency

-

13.56

-

MHz

input capacitance for

MF3ICD21/41/81

2.8 V RMS

[3] 14.96

17.0

19.04

pF

input capacitance for

MF3ICDH21/41/81

64

69

74

pF

EEPROM characteristics

retention time

10

-

-

year

write endurance

200000

500000

-

cycle

write cycle time

2.9

-

ms

Table 2.

Ordering information

Type number

Package

Name

Description

Version

MF3ICD8101DUD/05

FFC

8 inch wafer (sawn; 120

m thickness, on film frame carrier; electronic

fail die marking according to SECSII format); see Ref. 4,

8K EEPROM, 17pF input capacitance

-

MF3ICD4101DUD/05

FFC

8 inch wafer (sawn; 120

m thickness, on film frame carrier; electronic

fail die marking according to SECSII format); see Ref. 4,

4K EEPROM, 17pF input capacitance

-

MF3ICD2101DUD/05

FFC

8 inch wafer (sawn; 120

m thickness, on film frame carrier; electronic

fail die marking according to SECSII format); see Ref. 4,

2K EEPROM, 17pF input capacitance

-

MF3ICDH8101DUD/05

FFC

8 inch wafer (sawn; 120

m thickness, on film frame carrier; electronic

fail die marking according to SECSII format); see Ref. 5,

8K EEPROM, 70pF input capacitance

-

MF3ICDH4101DUD/05

FFC

8 inch wafer (sawn; 120

m thickness, on film frame carrier; electronic

fail die marking according to SECSII format); see Ref. 5,

4K EEPROM, 70pF input capacitance

-

MF3ICDH2101DUD/05

FFC

8 inch wafer (sawn; 120

m thickness, on film frame carrier; electronic

fail die marking according to SECSII format); see Ref. 5,

2K EEPROM, 70pF input capacitance

-

MF3MOD8101DA4/05

PLLMC[1]

plastic leadless module carrier package; 35 mm wide tape; see Ref. 6,

8K EEPROM, 17pF input capacitance

SOT500-2

MF3MOD4101DA4/05

PLLMC[1]

plastic leadless module carrier package; 35 mm wide tape; see Ref. 6,

4K EEPROM, 17pF input capacitance

SOT500-2

MF3MOD2101DA4/05

PLLMC[1]

plastic leadless module carrier package; 35 mm wide tape; see Ref. 6,

2K EEPROM, 17pF input capacitance

SOT500-2

MF3MODH8101DA4/05

PLLMC[1]

plastic leadless module carrier package; 35 mm wide tape; see Ref. 6,

8K EEPROM, 70pF input capacitance

SOT500-2