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поискавой системы для электроныых деталей |
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поискавой системы для электроныых деталей |
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MF1P2131DA4/02 датащи(PDF) 3 Page - NXP Semiconductors |
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MF1P2131DA4/02 датащи(HTML) 3 Page - NXP Semiconductors |
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3 / 33 page  NXP Semiconductors MF1P(H)x1y1 MIFARE Plus EV1 MF1P(H)x1y1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2019. All rights reserved. Product short data sheet Rev. 3.2 — 6 December 2018 COMPANY PUBLIC 366932 3 / 33 4 Quick reference data Remark: all values are target values only and subject to change until final product release. Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Ci input capacitance MF1P1y1 Tamb = 25°C; fi = 13.56 MHz; 1.5V RMS 16.15 17 17.85 pF input capacitance MF1PHx1y1 Tamb = 25°C; fi = 13.56 MHz; 1.5V RMS 66.5 70 73.5 pF fi input frequency - 13.56 - MHz EEPROM characteristics tret retention time Tamb = 22 °C 25 - - year Nendu(W) write endurance Tamb = 22 °C; excluding anti-tearing for AES keys or sector trailers in SL 3 200000 500000 - cycle |
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