MAC223FP Series MAC223AFP Series

2

Motorola Thyristor Device Data

Characteristic

Symbol

Min

Typ

Max

Unit

Peak Blocking Current(1)

TJ = 25°C

(VD = Rated VDRM, Gate Open)

TJ = 125°C

IDRM

—

—

—

—

10

2

µA

mA

Peak On-State Voltage

(ITM = 35 A Peak, Pulse Width p 2 ms, Duty Cycle p 2%)

VTM

—

1.4

1.85

Volts

Gate Trigger Current (Continuous dc)

(VD = 12 V, RL = 100 Ω)

MT2(+), G(+); MT2(–), G(–); MT2(+), G(–)

MT2(–), G(+) “A” SUFFIX ONLY

IGT

—

—

20

30

50

75

mA

Gate Trigger Voltage (Continuous dc)

(VD = 12 V, RL = 100 Ω)

MT2(+), G(+); MT2(–), G(–); MT(+), G(–)

MT2(–), G(+) “A” SUFFIX ONLY

(VD = Rated VDRM, TJ = 125°C, RL = 10 k)

MT(+), G(+); MT2(–), G(–); MT2(+), G(–)

MT2(–), G(+) “A” SUFFIX ONLY

VGT

—

—

0.2

0.2

1.1

1.3

0.4

0.4

2

2.5

—

—

Volts

Holding Current

(VD = 12 V, ITM = 200 mA, Gate Open)

IH

—

10

50

mA

Gate Controlled Turn-On Time

(VD = Rated VDRM, ITM = 35 A Peak, IG = 200 mA)

tgt

—

1.5

—

µs

Critical Rate of Rise of Off-State Voltage

(VD = Rated VDRM, Exponential Waveform, TC = 125°C)

dv/dt

—

40

—

V/

µs

Critical Rate of Rise of Commutation Voltage

(VD = Rated VDRM, ITM = 35 A Peak, Commutating

di/dt = 12.6 A/ms, Gate Unenergized, TC = 80°C)

dv/dt(c)

—

5

—

V/

µs

1. Ratings apply for open gate conditions. Devices shall not be tested with a constant current source for blocking voltage such that the voltage

applied exceeds the rated blocking voltage.

Figure 2. On-State Power Dissipation

Figure 1. RMS Current Derating

75

95

IT(RMS), RMS ON-STATE CURRENT (AMPS)

25

20

5

125

115

85

10

0

15

105

10

0

0

25

20

40

30

20

10

5

15

IT(RMS), RMS ON-STATE CURRENT (AMPS)